BC636 Datasheet

BC636

Datasheet specifications

Datasheet's name BC636
File size 61.805 KB
File type pdf
Number of pages 4

Download Datasheet BC636

Download Datasheet

Other documentations

BC636 7 pages

Technical specifications

  • Manufacturer: ON Semiconductor
  • Series: -
  • Packaging: Bulk
  • Part Status: Obsolete
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
  • Base Part Number: BC636

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